MOSFETs
Products (57)
STP8N60M2 - 600V 8A N-Channel Power MOSFET | STMicroelectronics
The STP8N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 8A at 25°C, with a low on-resistance of 0.55Ω (typical) and a gate charge of 16nC. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch in power electronics. It operates by controlling the voltage on the gate terminal to modulate the conductivity between the drain and source. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient switching at high frequencies. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STP8N60M2 include a very low gate charge (16nC) for reduced switching losses, a high dv/dt capability for ruggedness, and 100% avalanche tested for reliability. The device also offers a wide operating temperature range from -55°C to +150°C, making it suitable for demanding industrial environments. The TO-220 package provides a low thermal resistance of 62.5°C/W (junction-to-ambient), allowing efficient heat dissipation with proper heatsinking. The MDmesh M2 technology combines a vertical structure with a deep trench gate, resulting in a significant reduction in on-resistance and gate charge compared to conventional planar MOSFETs. This technology enables higher efficiency and lower switching losses, particularly in high-frequency applications. The device's fast body diode and low reverse recovery charge (Qrr) further enhance performance in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STP8N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. For PFC, the device's high voltage rating and low gate charge enable efficient boost converters operating at high frequencies. When designing with this device, ensure adequate gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor in the range of 10-100Ω is recommended to control switching speed and reduce EMI. Proper PCB layout with short, wide traces for high-current paths and a low-inductance gate loop is essential for reliable operation.
STU16N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
The STU16N65M5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 16A at 25°C, with a low on-resistance of 0.29 ohm (typical) to minimize conduction losses. The device is housed in an IPAK (TO-251) package, which offers a compact footprint with a metal tab for thermal dissipation, suitable for through-hole mounting in power supplies and industrial equipment. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power handling and switching requirements. Key features of the STU16N65M5 include a very low gate charge (Qg) of 38 nC (typical), which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 400 mJ (single pulse), making it suitable for applications where inductive loads may cause voltage spikes. Technically, the MDmesh M5 series utilizes a proprietary strip layout technology that reduces on-resistance and gate charge simultaneously, achieving a figure of merit (RDS(on) x Qg) that is among the best in its class. This technology enhances the device's efficiency in high-frequency switching applications, where both conduction and switching losses are critical. The STU16N65M5 also features a built-in diode with fast recovery characteristics, reducing reverse recovery losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS) for consumer and industrial electronics, power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. Its 650V rating provides ample margin for universal input (85-265V AC) power supplies, while the low on-resistance ensures high efficiency in continuous conduction mode. When designing with the STU16N65M5, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Thermal management is crucial: the IPAK package's tab should be soldered to a sufficient copper area or heatsink to dissipate heat, especially at high currents. Always consider the device's SOA (Safe Operating Area) and avalanche ratings when designing for inductive loads.
STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
The STW11NK90Z is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 900V, a continuous drain current (ID) of 9.5A at 25°C, and a low on-resistance (RDS(on)) of 0.85 ohm. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW11NK90Z include a high voltage rating of 900V, making it suitable for applications such as switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-voltage DC-DC converters. The low on-resistance minimizes conduction losses, improving overall efficiency. The device also features a fast switching speed, which is critical for reducing switching losses in high-frequency applications. The STW11NK90Z utilizes STMicroelectronics' advanced PowerMESH technology, which provides a robust and reliable structure. The device has a maximum junction temperature of 150°C and is available in a TO-247 package, which offers a low thermal resistance of 0.5°C/W, enabling efficient heat dissipation. The device is RoHS compliant and lead-free, meeting environmental standards. Typical applications include high-voltage power supplies, industrial motor drives, and renewable energy inverters. The device's high voltage rating and low on-resistance make it ideal for these applications, where efficiency and reliability are paramount. When designing with the STW11NK90Z, it is important to consider the gate drive requirements. The device has a gate threshold voltage of 3V to 5V, and a gate charge of 45nC, which should be considered when designing the gate drive circuit. Additionally, proper heat sinking is essential to maintain the junction temperature within safe limits.
STW12N60M2 - 600V 12A N-Channel MDmesh M2 MOSFET | STMicroelectronics
The STW12N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.38 ohm (typical) and a fast body diode. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and inverters, where they handle high voltages and currents with minimal conduction and switching losses. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speed and low drive power. Key features of the STW12N60M2 include a low gate charge (Qg) of 30 nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a high dv/dt capability and is avalanche-rated, ensuring robustness in harsh environments. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for applications where efficiency is critical. The STW12N60M2 utilizes STMicroelectronics' MDmesh M2 vertical structure, which combines a low on-resistance with a fast intrinsic diode. This technology reduces conduction and switching losses, improving overall system efficiency. The device is fully isolated and RoHS compliant, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. The high voltage rating and low on-resistance make it ideal for 600V-class power conversion systems. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking is required for high-current operation, as power dissipation can be significant.
STW18N60M2 - 650V 18A N-Channel Power MOSFET | STMicroelectronics
The STW18N60M2 is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a breakdown voltage of 650V and a continuous drain current of 18A at 25°C. It is housed in a TO-247 package, which is a through-hole package suitable for high-power applications. This device is part of the MDmesh M2 series, which utilizes ST's advanced strip layout technology to achieve low on-resistance and reduced switching losses. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification applications. It operates by controlling the flow of current through a semiconductor channel using an electric field, and it is widely used in power electronics for its high switching speed and efficiency. Power MOSFETs are a subset of discrete semiconductors, which are fundamental building blocks in power management and conversion systems. Key features of the STW18N60M2 include a low typical on-resistance of 0.19 ohm (at VGS=10V, ID=9A), a high avalanche ruggedness with an energy rating of 700 mJ, and a fast body diode with low reverse recovery charge. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. The TO-247 package provides excellent thermal performance with a junction-to-case thermal resistance of 0.6°C/W, enabling efficient heat dissipation. The STW18N60M2 is built using ST's MDmesh M2 technology, which combines a vertical structure with a strip layout to minimize on-resistance and gate charge. This results in improved figure of merit (FOM) compared to previous generations, leading to higher efficiency in power conversion circuits. The device is designed for hard-switching topologies and offers a low gate charge of 45 nC, reducing driver requirements and switching losses. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-frequency DC-DC converters. In an SMPS, the STW18N60M2 can be used as the main switching element in the primary side, handling high voltage and current with minimal losses. Its low on-resistance ensures high efficiency, while its fast switching characteristics reduce electromagnetic interference (EMI). When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The device is not internally protected against overcurrent, so external current sensing and protection circuitry are recommended. Additionally, a proper snubber circuit may be required to manage voltage spikes during switching transitions.
STW20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
The STW20N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 20A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and inverters. They are preferred for their fast switching speeds, high input impedance, and low drive power requirements compared to bipolar junction transistors. Key features of the STW20N60M2 include a low gate charge (Qg) of 45 nC, which reduces switching losses and enables high-frequency operation. The device also offers a fast body diode with low reverse recovery charge, making it suitable for bridge topologies. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), balancing conduction and switching losses for optimal efficiency. The STW20N60M2 utilizes a vertical DMOS structure with a striped layout, optimizing current distribution and thermal performance. The TO-247 package offers a low thermal resistance of 0.5°C/W (junction-to-case), allowing efficient heat dissipation. The device is avalanche-rated, with an avalanche energy of 1.2 J, ensuring robustness in inductive load switching. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor drives. The high voltage rating and low on-resistance make it ideal for 400V bus systems and 3-phase rectification. In PFC boost converters, the low gate charge enables high switching frequencies, reducing magnetic component size. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to achieve low RDS(on). A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking is essential for continuous operation at high currents, as power dissipation can exceed 100W in worst-case conditions.
STW26N60M2 - 600V 26A N-Channel Power MOSFET | STMicroelectronics
The STW26N60M2 is an N-channel Power MOSFET manufactured by STMicroelectronics, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 26A at 25°C, making it suitable for a wide range of industrial and consumer power systems. The device is housed in a TO-247 package, which provides excellent thermal performance and is widely used in power electronics. A Power MOSFET is a type of field-effect transistor specifically designed to handle high voltages and currents in switching and amplification applications. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low on-resistance compared to bipolar transistors. Power MOSFETs are essential components in power management systems, where they function as switches in DC-DC converters, motor drives, and power supplies, enabling efficient energy conversion and regulation. Key features of the STW26N60M2 include a low on-resistance (RDS(on)) of typically 0.125 ohm at VGS=10V, which minimizes conduction losses and improves overall efficiency. The device also offers a fast switching performance with a total gate charge (Qg) of 78 nC, reducing switching losses in high-frequency applications. Additionally, it has a wide operating temperature range from -55°C to +150°C, ensuring reliability in harsh environments. The TO-247 package provides a low thermal resistance of 0.5°C/W (junction-to-case), enabling efficient heat dissipation. The STW26N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve a good trade-off between on-resistance and switching performance. This technology enhances the device's robustness against avalanche breakdown and improves its body diode characteristics, making it suitable for bridge topologies and inductive load switching. The device also features a built-in gate-source ESD protection, enhancing its durability during handling and operation. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor control, and uninterruptible power supplies (UPS). In these applications, the STW26N60M2 provides efficient switching and low conduction losses, contributing to higher system efficiency and reduced heat generation. Its high voltage rating and current capability make it ideal for 400V and 600V bus systems commonly found in industrial and telecom power supplies. When designing with this device, ensure proper gate driving to minimize switching losses and avoid parasitic turn-on. A gate resistor in the range of 10-100 ohm is recommended to control the switching speed and reduce EMI. Additionally, adequate heat sinking is required to maintain the junction temperature within safe limits, especially when operating at high currents and ambient temperatures.
STW30N60M2 - 600V 30A N-Channel Power MOSFET | STMicroelectronics
The STW30N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 30A at 25°C, with a low on-resistance of 0.098 ohm (typical) and a fast body diode. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering high switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of switch-mode power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW30N60M2 include a low gate charge (Qg) of 60 nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh environments. The TO-247 package has a thermal resistance of 0.5°C/W (junction-to-case), allowing efficient heat dissipation when mounted on a suitable heatsink. The STW30N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced capacitance. This results in improved figure of merit (FOM) compared to previous generations, making it suitable for high-efficiency designs. The device also features a fast intrinsic body diode with low reverse recovery charge, which is critical for bridge topologies where diode recovery losses can dominate. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor drives. In an SMPS, the STW30N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. For PFC, the device's high voltage rating and low gate charge enable efficient boost converters operating at high frequencies. When designing with the STW30N60M2, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. The device is not internally protected against overcurrent, so an external current-sense resistor or fuse is recommended. Additionally, a gate resistor (e.g., 10 ohm) may be used to dampen ringing caused by parasitic inductance and capacitance.
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
The STW45NM50 is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion applications. It features a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 45A at 25°C, and a low on-resistance (RDS(on)) of 0.09 ohm. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of power management systems, motor drives, and switch-mode power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW45NM50 include a low gate charge (Qg) of 120 nC, which enables fast switching and reduced driver requirements. The device also features a high avalanche ruggedness, with an avalanche energy rating of 1.2 J, making it suitable for applications where inductive loads are present. The TO-247 package offers a low thermal resistance of 0.5°C/W, allowing efficient heat dissipation in high-power designs. The STW45NM50 utilizes ST's proprietary MDmesh technology, which reduces on-resistance and gate charge compared to conventional MOSFETs. This technology enhances the device's efficiency and switching performance, making it ideal for high-frequency power conversion circuits. The device also includes an integrated body diode with fast recovery characteristics, reducing switching losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor drives, and uninterruptible power supplies (UPS). The high voltage rating and low on-resistance make it suitable for 400V and 500V bus systems commonly found in industrial and telecom equipment. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize conduction losses. The device is RoHS compliant and halogen-free, meeting modern environmental standards. For automotive applications, consider the AEC-Q101 qualified variants if available.