1ED3122MC12HXUMA1 vs 2ED2738S01GXTMA1 Comparison
Detailed side-by-side comparison of 1ED3122MC12HXUMA1 by Infineon and 2ED2738S01GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon
1ED3122MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3122MC12HXUMA1 | 2ED2738S01GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.92 | $0.95 |
| Product Type | Isolated Gate Driver (single-channel) | β |
| Isolation Technology | Coreless Transformer (CT) | β |
| Isolation Voltage (Vrms) | 5.7 kVrms | β |
| Maximum Transient Isolation (Vpk) | 8 kVpk | β |
| Output Current (source / sink) | 10 A / 9 A | β |
| Configuration | High-side, non-inverting | β |
| Number of Channels | 1 | β |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | β |
| Propagation Delay (typ.) | 30 ns | β |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | β |
| Miller Clamp | Active (integrated) | β |
| Short-Circuit Clamping | Yes | β |
| UVLO | Primary and secondary side | β |
| Operating Temperature | -40 C to +125 C | -40C to +125C |
| Package | PG-DSO-8-66 (300-mil DSO-8) | PG-VSON-10-5 (3x3 mm) with EP |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 2 | 2 (1 year) |
| RoHS Status | Compliant | Compliant |
| Driver Configuration | β | Half-Bridge (High-Side + Low-Side) |
| Output Current (Source, peak) | β | 4.0 A |
| Output Current (Sink, peak) | β | 8.0 A |
| Output Current (Source, typ) | β | 1.0 A |
| Output Current (Sink, typ) | β | 2.0 A |
| Number of Outputs | β | 1 |
| Input Type | β | Non-Inverting |
| Input Logic Compatibility | β | TTL |
| Supply Voltage (VDD/VCC) | β | 6 V to 20 V |
| Bootstrap Supply Voltage | β | Up to 600 V (HS pin rating) |
| Propagation Delay (typ) | β | 120 ns |
| Channel-to-Channel Match | β | 40 ns |
| Rise/Fall Time (1 nF load) | β | 1.5 ns / 1.5 ns |
| Negative Transient Immunity (HS) | β | -10 V to +20 V transient |
| Under-Voltage Lockout | β | VCC and Bootstrap |
| Bootstrap Diode | β | Integrated |