1ED3124MC12HXUMA1 vs 1ED3142MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1ED3124MC12HXUMA1 by Infineon and 1ED3142MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveInfineon
1ED3142MC12HXUMA1
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3124MC12HXUMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $1.32 |
| Channel Type | Single-channel | β |
| Configuration | High-side / Low-side (non-inverting) | Inverting, Non-Inverting |
| Number of Drivers | 1 | β |
| Number of Outputs | 1 | 2 (separate source/sink) |
| Peak Source Current | 13.5 A | β |
| Peak Sink Current | 14 A | β |
| Isolation Technology | Magnetic coupling (coreless transformer) | Coreless transformer (galvanic) |
| Isolation Voltage (RMS) | 5.7 kV | β |
| Transient Overvoltage | 8000 Vpk | β |
| Supply Voltage (VCC2) | 10.5 V to 35 V | β |
| Supply Current (Max) | 1.1 mA | β |
| Propagation Delay (Typ) | 90 ns | β |
| Rise Time | 15 ns | β |
| Fall Time | 30 ns | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-DSO-8 (DSO-8) | PG-DSO-8 (PG-LDSO-8-1) |
| Mounting Type | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | β |
| Target Devices | IGBT, SiC MOSFET | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | 1ED3142MC12HXUMA1 |
| Product Family | β | EiceDRIVER X3 Compact |
| Driver Type | β | Isolated single-channel gate driver |
| Isolation Voltage | β | 3000 Vrms |
| Number of Channels | β | 1 |
| Source Drive Current | β | 6 A |
| Sink Drive Current | β | 6.5 A |
| Maximum Rise Time | β | 20 ns |
| Maximum Fall Time | β | 20 ns |
| Propagation Delay (typ.) | β | 40 ns |
| Supported Switches | β | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | β | Compliant |
| Part Status | β | Active |
| ECCN | β | EAR99 |