1ED3124MC12HXUMA1 vs 1EDN7146UXTSA1 Comparison
Detailed side-by-side comparison of 1ED3124MC12HXUMA1 by Infineon and 1EDN7146UXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveInfineon
1EDN7146UXTSA1
1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon
1EDN7146UXTSA1 β ActiveSpecification Comparison
| Parameter | 1ED3124MC12HXUMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $0.82 |
| Channel Type | Single-channel | β |
| Configuration | High-side / Low-side (non-inverting) | β |
| Number of Drivers | 1 | β |
| Number of Outputs | 1 | β |
| Peak Source Current | 13.5 A | β |
| Peak Sink Current | 14 A | β |
| Isolation Technology | Magnetic coupling (coreless transformer) | β |
| Isolation Voltage (RMS) | 5.7 kV | β |
| Transient Overvoltage | 8000 Vpk | β |
| Supply Voltage (VCC2) | 10.5 V to 35 V | β |
| Supply Current (Max) | 1.1 mA | β |
| Propagation Delay (Typ) | 90 ns | β |
| Rise Time | 15 ns | [DATA_NEEDED: typical rise time ns] |
| Fall Time | 30 ns | [DATA_NEEDED: typical fall time ns] |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-DSO-8 (DSO-8) | PG-VSON-1 (6-pin with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | β |
| Target Devices | IGBT, SiC MOSFET | β |
| RoHS Status | Compliant | Compliant |
| Driver Type | β | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | β | 200 V |
| Input Configuration | β | Truly differential (TDI) |
| Output Current (Source / Sink) | β | 1.5 A / 2.5 A |
| Propagation Delay | β | [DATA_NEEDED: typical propagation delay ns] |
| Supply Voltage (VCC) | β | [DATA_NEEDED: VCC range V] |
| Operating Temperature Range | β | -40C to +125C |
| Target Transistor | β | GaN SG HEMT or power MOSFET |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Topology Support | β | Half-bridge, low-side, high-side |