1ED3125MU12FXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1ED3125MU12FXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3125MU12FXUMA1
1ED3125MU12FXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3125MU12FXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3125MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Product Family | EiceDRIVER Compact 1ED31xx | β |
| Function | Single-channel isolated gate driver | β |
| Peak Output Current | 14 A | β |
| Typical Output Current | 10 A | β |
| Isolation Voltage | 3000 Vrms | β |
| Propagation Delay (typ) | 90 ns | β |
| Number of Channels | 1 | β |
| Isolation Technology | Magnetic coupling (coreless transformer) | Magnetic coupling (coreless transformer) |
| Package | PG-DSO-8 | PG-DSO-8 (DSO-8) |
| Pin Count | 8 | β |
| Driver Supply Voltage (VCC) | 3 V to 5.5 V (input side) | β |
| Output Side Supply (VOUT) | 12 V to 20 V | β |
| Operating Temperature Range | -40 C to +150 C | β |
| Active Miller Clamp | Yes | β |
| Short-Circuit Clamping | Yes | β |
| Active Shutdown | Yes | β |
| Undervoltage Lockout (UVLO) | Yes | β |
| RoHS Status | Compliant | Compliant |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Mounting Type | β | Surface Mount |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |