1ED3142MC12HXUMA1 vs 2ED21064S06JXUMA1 Comparison
Detailed side-by-side comparison of 1ED3142MC12HXUMA1 by Infineon and 2ED21064S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3142MC12HXUMA1
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 β ActiveInfineon
2ED21064S06JXUMA1
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3142MC12HXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.85 |
| Manufacturer | Infineon Technologies | β |
| Part Number | 1ED3142MC12HXUMA1 | β |
| Product Family | EiceDRIVER X3 Compact | β |
| Driver Type | Isolated single-channel gate driver | β |
| Isolation Technology | Coreless transformer (galvanic) | β |
| Isolation Voltage | 3000 Vrms | β |
| Number of Channels | 1 | β |
| Number of Outputs | 2 (separate source/sink) | β |
| Configuration | Inverting, Non-Inverting | Half-Bridge (2 outputs, non-inverting) |
| Source Drive Current | 6 A | β |
| Sink Drive Current | 6.5 A | β |
| Maximum Rise Time | 20 ns | β |
| Maximum Fall Time | 20 ns | β |
| Propagation Delay (typ.) | 40 ns | β |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | β |
| Package | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-14 (14-pin SOIC) |
| Mounting Type | Surface Mount | Surface Mount |
| EU RoHS | Compliant | β |
| Part Status | Active | β |
| ECCN | EAR99 | β |
| Function | β | High-Side and Low-Side Gate Driver |
| Topology | β | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | β | 650 V |
| Supply Voltage (VCC) | β | 10 V to 20 V |
| Source Current (typical) | β | 0.29 A |
| Sink Current (typical) | β | 0.7 A |
| Rise Time (typical) | β | [DATA_NEEDED: rise time] |
| Fall Time (typical) | β | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | β | 100 ns |
| Channel-to-Channel Delay Match | β | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | β | Yes (both channels) |
| Bootstrap Diode | β | Integrated |
| Input Logic Compatibility | β | 3.3 V / 5 V CMOS |
| Operating Temperature | β | -40C to +125C |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| RoHS Status | β | ROHS3 Compliant |
| Negative Gate Drive Robustness | β | -0.7 V |