1EDI20N12AFXUMA1 vs 2ED21834S06JXUMA1 Comparison

Detailed side-by-side comparison of 1EDI20N12AFXUMA1 by Infineon and 2ED21834S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED21834S06JXUMA1

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 βœ“ Active

Specification Comparison

Parameter 1EDI20N12AFXUMA1 2ED21834S06JXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $0.89
Driver Configuration Single high-side, isolated β€”
Isolation Type Galvanic (coreless transformer), reinforced β€”
Number of Channels 1 β€”
Maximum Supply Voltage (Output Side) 17 V β€”
Minimum Supply Voltage (Output Side) 3.1 V β€”
Peak Source Current 4.0 A (typical) β€”
Peak Sink Current 3.5 A (typical) β€”
Working Voltage (Isolation) 1200 V (high-side rail reference) β€”
Propagation Delay 120 ns (typical) β€”
Output Configuration Separate source and sink pins β€”
Short-Circuit Clamping Yes (built-in) β€”
Package PG-DSO-8-51 (DSO-8, 8-pin, narrow body) PG-DSO-14-49 (DSO-14)
Operating Temperature Range -40 Β°C to +125 Β°C -40 Β°C to +125 Β°C
Mounting Type Surface Mount Surface Mount
MSL Level 2 (per JEDEC J-STD-020) β€”
RoHS Compliance Compliant β€”
Lead-Free Yes β€”
Product Type β€” Half-Bridge Gate Driver IC
Configuration β€” Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) β€” 650 V
Typical Sink Current β€” 2.5 A
Typical Source Current β€” 2.5 A
Input Logic β€” Non-Inverting
Integrated Bootstrap Diode β€” Yes
Technology β€” SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) β€” Yes (VCC and VBS)
Number of Pins β€” 14
RoHS Status β€” Compliant
Standard Reel Quantity β€” 3000

Datasheets & Resources

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