1EDI20N12AFXUMA1 vs 2ED2183S06FXUMA1 Comparison

Detailed side-by-side comparison of 1EDI20N12AFXUMA1 by Infineon and 2ED2183S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED2183S06FXUMA1 2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 βœ“ Active

Specification Comparison

Parameter 1EDI20N12AFXUMA1 2ED2183S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $1.05
Driver Configuration Single high-side, isolated β€”
Isolation Type Galvanic (coreless transformer), reinforced β€”
Number of Channels 1 β€”
Maximum Supply Voltage (Output Side) 17 V β€”
Minimum Supply Voltage (Output Side) 3.1 V β€”
Peak Source Current 4.0 A (typical) β€”
Peak Sink Current 3.5 A (typical) β€”
Working Voltage (Isolation) 1200 V (high-side rail reference) β€”
Propagation Delay 120 ns (typical) β€”
Output Configuration Separate source and sink pins β€”
Short-Circuit Clamping Yes (built-in) β€”
Package PG-DSO-8-51 (DSO-8, 8-pin, narrow body) PG-DSO-8-53 (DSO-8)
Operating Temperature Range -40 Β°C to +125 Β°C β€”
Mounting Type Surface Mount Surface Mount
MSL Level 2 (per JEDEC J-STD-020) 2
RoHS Compliance Compliant β€”
Lead-Free Yes β€”
Driver Type β€” Half-Bridge Gate Driver
Number of Drivers β€” 1
Number of Outputs β€” 1 (half-bridge: high-side + low-side)
Configuration β€” High Side, Low Side, Non-Inverting
Maximum Offset Voltage β€” 650 V
Output Current (Sink/Source) β€” 2.5 A typical
Rise Time β€” 15 ns
Fall Time β€” 15 ns
Supply Voltage (VCC) β€” 10 V to 20 V
Bootstrap Supply (VBS) β€” 10 V to 20 V (typ.)
Logic Input Voltage β€” 3.3 V / 5 V compatible (HIN, LIN)
Input Type β€” Non-Inverting
Bootstrap Diode β€” Integrated
Undervoltage Lockout (UVLO) β€” VCC and VBS
Operating Temperature β€” -40 C to +125 C
Terminal Finish β€” Tin (e3 per JESD-609)
Technology β€” SOI (Silicon-On-Insulator)
RoHS Status β€” Compliant

Datasheets & Resources

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