1EDN7116GXTMA1 vs 1EDN7512GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1EDN7512GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7512GXTMA1 1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7116GXTMA1 1EDN7512GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.82
Function Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver, single channel
Driver Configuration Non-inverting, single low-side β€”
Number of Drivers 1 β€”
Peak Source Current 2 A (typ) 4 A
Peak Sink Current 4 A (typ) 8 A
Input Type Truly Differential Input (TDI) β€”
Supply Voltage (VCC) 4.5 V to 5.5 V β€”
Switch-Node Blocking Voltage 200 V (max) β€”
Propagation Delay (Typ) 9 ns β€”
Rise Time (Typ) 3 ns β€”
Fall Time (Typ) 3 ns β€”
Quiescent Current (Typ) 0.6 mA β€”
Miller Clamp Integrated, active β€”
UVLO Yes (VCC and gate-rail monitored) [DATA_NEEDED: UVLO threshold]
Operating Temperature Range -40 Β°C to +125 Β°C -40 C to +125 C
Package PG-VSON-10-4 (3.0 mm Γ— 3.0 mm) PG-WSON-6-1 (6-pin WSON with exposed pad)
Mounting Type Surface Mount Surface Mount
MSL Level MSL3 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET β€”
Number of Outputs β€” 1
Logic Inputs β€” Inverting and Non-Inverting
Propagation Delay (typical) β€” 19 ns
Input Voltage Range β€” [DATA_NEEDED: VCC range]
Input Robustness (negative) β€” -10 V
Rise Time β€” [DATA_NEEDED: typical tr]
Fall Time β€” [DATA_NEEDED: typical tf]
Lead-Free β€” Yes

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