1EDN7126GXTMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7126GXTMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7126GXTMA1
1EDN7126GXTMA1 - 1.5A 200V TDI Gate Driver for GaN | Infineon
1EDN7126GXTMA1 β ActiveInfineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7126GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $0.84 |
| Function | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Configuration | Non-Inverting | β |
| Channel Type | Single | β |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | β |
| Peak Source Current | 1.5 A | 2 A (typ) |
| Peak Sink Current | 1.5 A | 4 A (typ) |
| Common-Mode Voltage (CMR) | 200 V | β |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | β |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | β |
| Operating Temperature Range | -40C to +125C | -40 Β°C to +125 Β°C |
| Package | PG-VSON-10-4 | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL3 |
| RoHS Status | Compliant | Compliant |
| Reach | Compliant | β |
| Lead-Free | Yes | β |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | β |
| Driver Configuration | β | Non-inverting, single low-side |
| Number of Drivers | β | 1 |
| Supply Voltage (VCC) | β | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| UVLO | β | Yes (VCC and gate-rail monitored) |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |