1EDN7126GXTMA1 vs 1EDN7136GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7126GXTMA1 by Infineon and 1EDN7136GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7126GXTMA1
1EDN7126GXTMA1 - 1.5A 200V TDI Gate Driver for GaN | Infineon
1EDN7126GXTMA1 β ActiveInfineon
1EDN7136GXTMA1
1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon
1EDN7136GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7126GXTMA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $1.02 |
| Function | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | β |
| Configuration | Non-Inverting | Single channel, non-inverting |
| Channel Type | Single | β |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | β |
| Peak Source Current | 1.5 A | 4 A |
| Peak Sink Current | 1.5 A | 8 A |
| Common-Mode Voltage (CMR) | 200 V | β |
| Input Type | Truly Differential Input (TDI) | β |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | β |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | β |
| Operating Temperature Range | -40C to +125C | β |
| Package | PG-VSON-10-4 | PG-VSON-10-4 (leadless, thermal pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Reach | Compliant | β |
| Lead-Free | Yes | β |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | β |
| Product Type | β | Low-side gate driver IC |
| Target Switch | β | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | β | TTL/CMOS compatible |
| UVLO | β | Yes (VDD under-voltage lockout) |
| Propagation Delay | β | Sub-nanosecond class |
| Operating Temperature | β | -40 C to +125 C |
| Lead-free | β | Yes |
| Input Voltage (VDD) | β | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | β | Approximately 6 V (regulated) |