1EDN7136GXTMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7136GXTMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7136GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.84 |
| Product Type | Low-side gate driver IC | β |
| Configuration | Single channel, non-inverting | β |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | β |
| Input Logic | TTL/CMOS compatible | β |
| UVLO | Yes (VDD under-voltage lockout) | Yes (VCC and gate-rail monitored) |
| Propagation Delay | Sub-nanosecond class | β |
| Package | PG-VSON-10-4 (leadless, thermal pad) | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40 C to +125 C | β |
| MSL Level | [DATA_NEEDED: MSL level] | MSL3 |
| RoHS Status | Compliant | Compliant |
| Lead-free | Yes | β |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | β |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | β |
| Function | β | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | β | Non-inverting, single low-side |
| Number of Drivers | β | 1 |
| Input Type | β | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | β | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| Operating Temperature Range | β | -40 Β°C to +125 Β°C |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |