1EDN7136UXTSA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7136UXTSA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7136UXTSA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.84 |
| Function | High-side / Low-side gate driver IC | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driven Device Type | GaN HEMT, N-channel MOSFET | β |
| Number of Outputs | 2 (high-side and low-side) | β |
| Peak Source Current | 1 A | 2 A (typ) |
| Peak Sink Current | 2 A | 4 A (typ) |
| Driver Supply Voltage (Max) | 200 V | β |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | β |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Active Miller Clamp | Yes (integrated) | β |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | β |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | 9 ns |
| Operating Temperature Range | -40 C to +150 C | -40 Β°C to +125 Β°C |
| Package | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL3 |
| Driver Configuration | β | Non-inverting, single low-side |
| Number of Drivers | β | 1 |
| Supply Voltage (VCC) | β | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| UVLO | β | Yes (VCC and gate-rail monitored) |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |