1EDN7136UXTSA1 vs 1EDN7146UXTSA1 Comparison
Detailed side-by-side comparison of 1EDN7136UXTSA1 by Infineon and 1EDN7146UXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7136UXTSA1
1EDN7136UXTSA1 - 200V High-Side TDI Gate Driver IC | Infineon
1EDN7136UXTSA1 β ActiveInfineon
1EDN7146UXTSA1
1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon
1EDN7146UXTSA1 β ActiveSpecification Comparison
| Parameter | 1EDN7136UXTSA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.82 |
| Function | High-side / Low-side gate driver IC | β |
| Driven Device Type | GaN HEMT, N-channel MOSFET | β |
| Number of Outputs | 2 (high-side and low-side) | β |
| Peak Source Current | 1 A | β |
| Peak Sink Current | 2 A | β |
| Driver Supply Voltage (Max) | 200 V | β |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | β |
| Input Type | Truly Differential Input (TDI) | β |
| Active Miller Clamp | Yes (integrated) | β |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | β |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | β |
| Operating Temperature Range | -40 C to +150 C | -40C to +125C |
| Package | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-1 (6-pin with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Driver Type | β | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | β | 200 V |
| Input Configuration | β | Truly differential (TDI) |
| Output Current (Source / Sink) | β | 1.5 A / 2.5 A |
| Propagation Delay | β | [DATA_NEEDED: typical propagation delay ns] |
| Rise Time | β | [DATA_NEEDED: typical rise time ns] |
| Fall Time | β | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | β | [DATA_NEEDED: VCC range V] |
| Target Transistor | β | GaN SG HEMT or power MOSFET |
| Topology Support | β | Half-bridge, low-side, high-side |