2ED2106S06FXUMA1 vs 1ED3142MC12HXUMA1 Comparison

Detailed side-by-side comparison of 2ED2106S06FXUMA1 by Infineon and 1ED3142MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 βœ“ Active

Specification Comparison

Parameter 2ED2106S06FXUMA1 1ED3142MC12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $1.32
Offset Voltage (Voffset max) 650 V β€”
Configuration High-Side and Low-Side (Half-Bridge) Inverting, Non-Inverting
Source Current (typ.) 0.29 A β€”
Sink Current (typ.) 0.7 A β€”
Input Logic Compatibility CMOS, TTL β€”
Propagation Delay (typ.) 100 ns 40 ns
Number of Outputs 2 (1 high-side, 1 low-side) 2 (separate source/sink)
Number of Drivers 2 β€”
Number of Pins 8 β€”
Package PG-DSO-8-69 (DSO-8) PG-DSO-8 (PG-LDSO-8-1)
Mounting Type Surface Mount Surface Mount
Bootstrap Diode Integrated β€”
Operating Temperature Range -40C to +125C β€”
Packaging Tape & Reel β€”
Output Type Half-Bridge, Non-Inverting β€”
Manufacturer β€” Infineon Technologies
Part Number β€” 1ED3142MC12HXUMA1
Product Family β€” EiceDRIVER X3 Compact
Driver Type β€” Isolated single-channel gate driver
Isolation Technology β€” Coreless transformer (galvanic)
Isolation Voltage β€” 3000 Vrms
Number of Channels β€” 1
Source Drive Current β€” 6 A
Sink Drive Current β€” 6.5 A
Maximum Rise Time β€” 20 ns
Maximum Fall Time β€” 20 ns
Supported Switches β€” IGBT, MOSFET, SiC MOSFET
EU RoHS β€” Compliant
Part Status β€” Active
ECCN β€” EAR99

Datasheets & Resources

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