2ED21844S06JXUMA1 vs 1ED3124MC12HXUMA1 Comparison

Detailed side-by-side comparison of 2ED21844S06JXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED21844S06JXUMA1

2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon

2ED21844S06JXUMA1 βœ“ Active
Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 βœ“ Active

Specification Comparison

Parameter 2ED21844S06JXUMA1 1ED3124MC12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.68 $1.45
Driver Configuration Half-Bridge β€”
Number of Drivers 2 (high-side + low-side) 1
Input Type Non-Inverting β€”
Blocking Voltage (Voffset) 650 V β€”
Output Current (Source/Sink) 2.5 A typical β€”
Bootstrap Diode Integrated β€”
Supply Voltage (VCC) 10 V to 20 V [DATA_NEEDED: exact range] β€”
Propagation Delay (Typ.) 200 ns [DATA_NEEDED: matching value] β€”
Input Logic Compatibility TTL/CMOS 3.3 V and 5 V β€”
Undervoltage Lockout (UVLO) Yes, both HS and LS rails β€”
Shutdown Pin Yes β€”
Negative VS Transient Immunity -100 V typical β€”
Operating Temperature Range -40 C to +125 C β€”
Package PG-DSO-14-49 (DSO-14) PG-DSO-8 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] β€”
RoHS Status Compliant Compliant
Channel Type β€” Single-channel
Configuration β€” High-side / Low-side (non-inverting)
Number of Outputs β€” 1
Peak Source Current β€” 13.5 A
Peak Sink Current β€” 14 A
Isolation Technology β€” Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) β€” 5.7 kV
Transient Overvoltage β€” 8000 Vpk
Supply Voltage (VCC2) β€” 10.5 V to 35 V
Supply Current (Max) β€” 1.1 mA
Propagation Delay (Typ) β€” 90 ns
Rise Time β€” 15 ns
Fall Time β€” 30 ns
Operating Temperature β€” -40 C to +125 C
Protections β€” UVLO, Short-Circuit (DESAT)
Target Devices β€” IGBT, SiC MOSFET

Datasheets & Resources

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