2EDL8124GXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2EDL8124GXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDL8124GXUMA1
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
2EDL8124GXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2EDL8124GXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.45 |
| Driver Configuration | Half-bridge (high-side + low-side) | β |
| Input Type | Non-inverting, TTL-compatible with hysteresis | β |
| Number of Drivers | 2 | 1 |
| Peak Source Current | 3 A | 13.5 A |
| Peak Sink Current | 4 A | 14 A |
| Bootstrap Supply (VBS) Maximum | 120 V | β |
| VCC Supply Range | [DATA_NEEDED: VCC min/max typical range] | β |
| Isolation Type | Junction isolation (JI) | β |
| Bootstrap Diode | Integrated | β |
| Propagation Delay (typical) | < 50 ns | β |
| Delay Matching Between Channels | [DATA_NEEDED: delay matching spec in ns] | β |
| UVLO | Present on VCC and VBS | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range in C] | β |
| Package | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Outputs | β | 1 |
| Isolation Technology | β | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |