2EP101RXTMA1 vs 1ED3142MC12HXUMA1 Comparison

Detailed side-by-side comparison of 2EP101RXTMA1 by Infineon and 1ED3142MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EP101RXTMA1 1ED3142MC12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $1.32
Product Type Full-Bridge Transformer Driver PMIC β€”
Topology Full-bridge (H-bridge) with external transformer β€”
Supply Voltage Range 5 V to 20 V β€”
Maximum Output Power 5 W β€”
Switching Frequency Option 1 50 kHz β€”
Switching Frequency Option 2 65 kHz β€”
Duty Cycle Option 1 12% β€”
Duty Cycle Option 2 17% β€”
Number of Outputs 1 (full-bridge differential primary) 2 (separate source/sink)
Package PG-TSSOP-8 PG-DSO-8 (PG-LDSO-8-1)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 Β°C to +125 Β°C β€”
Primary Application Isolated IGBT and SiC MOSFET gate driver supply β€”
RoHS Compliance Compliant β€”
Delivery Form Tape and Reel (XT suffix) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” 1ED3142MC12HXUMA1
Product Family β€” EiceDRIVER X3 Compact
Driver Type β€” Isolated single-channel gate driver
Isolation Technology β€” Coreless transformer (galvanic)
Isolation Voltage β€” 3000 Vrms
Number of Channels β€” 1
Configuration β€” Inverting, Non-Inverting
Source Drive Current β€” 6 A
Sink Drive Current β€” 6.5 A
Maximum Rise Time β€” 20 ns
Maximum Fall Time β€” 20 ns
Propagation Delay (typ.) β€” 40 ns
Supported Switches β€” IGBT, MOSFET, SiC MOSFET
EU RoHS β€” Compliant
Part Status β€” Active
ECCN β€” EAR99

Datasheets & Resources

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