BAT42-TAP vs 1N5711 Comparison
Detailed side-by-side comparison of BAT42-TAP by Vishay Intertechnology and 1N5711 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BAT42-TAP | 1N5711 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.04 | $0.18 |
| Diode Type | Small-Signal Schottky Barrier | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | β |
| Average Forward Current (IF(AV)) | 200 mA | β |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | β |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | β |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | β |
| Package | DO-204AH (DO-35) glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| Mounting Type | Through Hole | Through-Hole |
| Termination Style | Axial Leads | β |
| Packaging Suffix | -TAP (Ammo tape packing) | β |
| Configuration | Single Diode | β |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | β |
| RoHS Status | Compliant | Compliant |
| Mounting Technology | Wave solder / hand solder | β |
| Peak Reverse Voltage (VRRM) | β | 70 V |
| Continuous Forward Current (IF) | β | 15 mA |
| Power Dissipation | β | 430 mW |
| Total Capacitance | β | 2 pF |
| Junction Capacitance (Cj) | β | 1 pF |
| Dynamic Resistance | β | 35 ohm |
| Breakdown Voltage (VB) | β | 70 V |
| Switching Speed | β | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | β | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current at rated VR] |