BSC009NE2LS5IATMA1 vs IPB020N08N5ATMA1 Comparison
Detailed side-by-side comparison of BSC009NE2LS5IATMA1 by Infineon and IPB020N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β Active
Specification Comparison
| Parameter | BSC009NE2LS5IATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $1.45 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOSβ’ 5 (25V/30V family) | OptiMOS 5 (N-channel trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in diode | Single N-channel, 3-pin (2+Tab) |
| Drain-Source Voltage (V_DS) max | 25 V | β |
| Gate-Source Voltage (V_GS) max | 20 V | β |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | β |
| R_DS(on) max @ V_GS=10V | 0.95 mΞ© | β |
| Continuous Drain Current (I_D) @ T_A=25Β°C | 40 A | β |
| Continuous Drain Current (I_D) @ T_C=25Β°C | 217 A (pulsed, datasheet rating) | β |
| Power Dissipation (P_D) @ T_A | 2.5 W | β |
| Power Dissipation (P_D) @ T_C | 74 W | β |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | β |
| Input Capacitance (C_iss) typ | 3200 pF | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TO263-3 (D2PAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Terminal Finish | Matte Tin (e3 per JESD-609) | β |
| Number of Terminals | 8 | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc=25C | β | 120 A |
| Pulsed Drain Current (IDM) | β | 480 A |
| Maximum RDS(on) at VGS=10V | β | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | β | 300 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | β | [DATA_NEEDED: EAS value] |