BSC009NE2LS5IATMA1 vs IQE012N03LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of BSC009NE2LS5IATMA1 by Infineon and IQE012N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β ActiveInfineon
IQE012N03LM5CGSCATMA1
IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | BSC009NE2LS5IATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $1.55 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOSβ’ 5 (25V/30V family) | OptiMOS 5 (trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in diode | β |
| Drain-Source Voltage (V_DS) max | 25 V | β |
| Gate-Source Voltage (V_GS) max | 20 V | β |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | β |
| R_DS(on) max @ V_GS=10V | 0.95 mΞ© | β |
| Continuous Drain Current (I_D) @ T_A=25Β°C | 40 A | β |
| Continuous Drain Current (I_D) @ T_C=25Β°C | 217 A (pulsed, datasheet rating) | β |
| Power Dissipation (P_D) @ T_A | 2.5 W | β |
| Power Dissipation (P_D) @ T_C | 74 W | β |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | β |
| Input Capacitance (C_iss) typ | 3200 pF | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-WHTFN-9-1 (PQFN 3.3 Γ 3.3 mm Source-Down dual-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, floor life unlimited) |
| Terminal Finish | Matte Tin (e3 per JESD-609) | β |
| Number of Terminals | 8 | β |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) @ Ta | β | 34 A |
| Continuous Drain Current (ID) @ Tc | β | 224 A |
| Maximum RDS(on) @ VGS=10V | β | 1.15 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ, per Merlin listing) |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes |