BSC009NE2LS5IATMA1 vs ISZ019N03L5SATMA1 Comparison
Detailed side-by-side comparison of BSC009NE2LS5IATMA1 by Infineon and ISZ019N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β ActiveInfineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | BSC009NE2LS5IATMA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.48 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOSβ’ 5 (25V/30V family) | β |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in diode | β |
| Drain-Source Voltage (V_DS) max | 25 V | β |
| Gate-Source Voltage (V_GS) max | 20 V | β |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | β |
| R_DS(on) max @ V_GS=10V | 0.95 mΞ© | β |
| Continuous Drain Current (I_D) @ T_A=25Β°C | 40 A | β |
| Continuous Drain Current (I_D) @ T_C=25Β°C | 217 A (pulsed, datasheet rating) | β |
| Power Dissipation (P_D) @ T_A | 2.5 W | β |
| Power Dissipation (P_D) @ T_C | 74 W | β |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | β |
| Input Capacitance (C_iss) typ | 3200 pF | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +175C (TJ max) |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Matte Tin (e3 per JESD-609) | β |
| Number of Terminals | 8 | β |
| RoHS Status | Compliant | β |
| Product Family | β | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 22 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| RDS(on) at VGS=10V | β | 1.9 mΞ© (typical, ID=20A) |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typical) |
| Gate-Source Voltage Rating (VGS) | β | Β±20 V |
| Total Gate Charge (Qg) | β | 44 nC at VGS=10V |
| Input Capacitance (Ciss) | β | 2800 pF at VDS=15V |
| RoHS / REACH | β | Compliant |
| Avalanche Rated | β | Yes |
| RG-tested | β | 100% |