BSC009NE2LSATMA1 vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC009NE2LSATMA1 by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LSATMA1
BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
BSC009NE2LSATMA1 β ActiveInfineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC009NE2LSATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 25V | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS (Trench) |
| Drain-Source Voltage (V_DS) | 25 V | β |
| Continuous Drain Current (I_D) at T_a | 41 A | β |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | β |
| Pulsed Drain Current (I_DM) | 255 A | β |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | β |
| Power Dissipation (T_a) | 2.5 W | β |
| Power Dissipation (T_c) | 96 W | β |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C (TJ) |
| Package / Case | PG-TDSON-8-7 (TDSON-8 FL) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 8 |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Series / Family | β | OptiMOS 25V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 96 W |
| Package | β | PG-TDSON-8-7 (TDSON-8 EP) |
| Configuration | β | Single N-Channel |
| Gate Drive | β | Logic-level compatible |
| Rds(on) at 10V | β | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | β | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |