BSC010N04LSATMA1 vs BSC011N03LSATMA1 Comparison
Detailed side-by-side comparison of BSC010N04LSATMA1 by Infineon and BSC011N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveInfineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC010N04LSATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.54 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Breakdown Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) Max | +/- 20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 38 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 100 A (TC) |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | β |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | β |
| Gate Threshold Voltage VGS(th) Typ | 2 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (Tc=25C) | 139 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Technology | OptiMOS 5 | β |
| Avalanche Rated | 100% avalanche tested | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | β | OptiMOS 30V |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 37 A |
| On-State Resistance (RDS(on)) at VGS=10V | β | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V (typ 1.6 V) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | β | 96 W |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| RoHS Status | β | Compliant |