BSC010N04LSATMA1 vs BSC019N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC010N04LSATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveInfineon
BSC019N04NSGATMA1
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
BSC019N04NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC010N04LSATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.58 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Breakdown Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) Max | +/- 20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 38 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | β |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | β |
| Gate Threshold Voltage VGS(th) Typ | 2 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (Tc=25C) | 139 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Technology | OptiMOS 5 | OptiMOS (trench) |
| Avalanche Rated | 100% avalanche tested | β |
| Manufacturer | Infineon Technologies | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 30 A |
| RDS(on) max at VGS=10V | β | 2.5 mΞ© |
| RDS(on) typ at VGS=10V | β | 1.9 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Power Dissipation (PD) at TC=25C | β | 125 W |
| RoHS Status | β | Compliant |