BSC010N04LSATMA1 vs ISC015N04NM5ATMA1 Comparison
Detailed side-by-side comparison of BSC010N04LSATMA1 by Infineon and ISC015N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β Active
Specification Comparison
| Parameter | BSC010N04LSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.98 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Breakdown Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) Max | +/- 20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 38 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | β |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | β |
| Gate Threshold Voltage VGS(th) Typ | 2 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (Tc=25C) | 139 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +175 C (junction, per OptiMOS 5) |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per Infineon SuperSO8 family) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Avalanche Rated | 100% avalanche tested | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | β | OptiMOS 5 40V Normal Level |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | 3.4 V (typ) |
| R_DS(on) max | β | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | β | 33 A |
| Continuous Drain Current (ID) at Tc=25C | β | 206 A |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 115 W |
| Package / Case | β | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Pin Count | β | 8 |
| RoHS Status | β | Compliant |
| Drive Level | β | Normal Level (VGS(th) ~3.4 V) |