BSC010NE2LSIATMA1 vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of BSC010NE2LSIATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveInfineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC010NE2LSIATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at TA | 38 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 96 W | β |
| Package | PG-TDSON-8-7 (TDSON-8 EP) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single N-Channel with Built-in Diode |
| Technology | OptiMOS (Trench) | N-Channel Trench MOSFET (OptiMOS) |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Gate Drive | Logic-level compatible | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | β |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Part Family | β | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Continuous Drain Current (ID) at Ta | β | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | β | 80 mJ |
| Power Dissipation (PD) at Tc | β | 69 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Moisture Sensitivity Level (MSL) | β | 1 |
| Built-in Body Diode | β | Yes |