BSC010NE2LSIATMA1 vs BSZ018NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC010NE2LSIATMA1 by Infineon and BSZ018NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveInfineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC010NE2LSIATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.39 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA | 38 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 96 W | β |
| Package | PG-TDSON-8-7 (TDSON-8 EP) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | β |
| Technology | OptiMOS (Trench) | OptiMOS (Infineon trench MOSFET) |
| Operating Temperature Range | -55C to +150C (TJ) | -55 C to +150 C |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Gate Drive | Logic-level compatible | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | β |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Part Number | β | BSZ018NE2LSIATMA1 |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 22 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | β | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 69 W |
| Lead-Free | β | Yes |