BSC011N03LSATMA1 vs BSC0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSATMA1 by Infineon and BSC0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveInfineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon |
| Product Series | OptiMOS 30V | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 37 A | β |
| Pulsed Drain Current (IDM) | 100 A (TC) | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25C | 96 W | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 25V/30V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 50 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Operating Junction Temperature | β | -55C to +150C |
| Avalanche Rated | β | Yes |
| Technology | β | Trench-gate OptiMOS 5 |