BSC011N03LSATMA1 vs BSC0911NDATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveInfineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 37 A | β |
| Pulsed Drain Current (IDM) | 100 A (TC) | 30 A |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 96 W | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8) | PG-TISON-8 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 25V |
| Configuration | β | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | β | 18 A |
| Power Dissipation (PD) | β | 1 W |
| Operating Temperature | β | -55C to +150C (junction) |
| Channel Type | β | N-Channel Enhancement Mode |
| Technology | β | OptiMOS trench MOSFET |
| Gate Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) at 10V VGS] |