BSC011N03LSATMA1 vs IPL60R065P7AUMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSATMA1 by Infineon and IPL60R065P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveInfineon
IPL60R065P7AUMA1
IPL60R065P7AUMA1 - 600V 65mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R065P7AUMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSATMA1 | IPL60R065P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | β |
| Polarity | N-Channel | Single N-channel |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 37 A | β |
| Pulsed Drain Current (IDM) | 100 A (TC) | β |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (PD) at TC=25C | 96 W | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55 Β°C to +150 Β°C (T<sub>j</sub>) |
| Package | PG-TDSON-8-1 (SuperSO8) | PG-VSON-4 (surface mount with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Technology Family | β | CoolMOSβ’ P7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 600 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 Β°C) | β | 41 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | β | 65 mΞ© (max) |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 Β°C) | β | 201 W |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 3.5 V |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | β | 2895 pF |
| Rise Time (t<sub>r</sub>) | β | 7 ns |
| Fall Time (t<sub>f</sub>) | β | 4 ns |
| Number of Pins | β | 4 |
| Channel Type | β | N-Channel |
| Drain to Source Voltage | β | 650 V (rating per AiEMA spec) |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 Β°C) | β | 0.053 Ξ© |
| Halogen-Free | β | Yes |