BSC011N03LSTATMA1 vs BSC12DN20NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSTATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSTATMA1
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC011N03LSTATMA1 NrndInfineon
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSTATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | β |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Total Gate Charge (Qg) typ | 72 nC | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8-5 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS power MOSFET |
| Configuration | Single with built-in diode | Single N-channel |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 200V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 11.3 A |
| Power Dissipation (PD, Tc) | β | 50 W |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Pin Count | β | 8 |