BSC011N03LSTATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSTATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSTATMA1
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC011N03LSTATMA1 NrndInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSTATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | β |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Total Gate Charge (Qg) typ | 72 nC | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Trench MOSFET, silicon |
| Configuration | Single with built-in diode | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |