BSC014N04LSATMA1 vs BSC014NE2LSIATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active
Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSATMA1 BSC014NE2LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.48
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID) at Ta 32 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
RDS(on) max at VGS=10 V 1.4 mOhm β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 96 W β€”
Gate-Source Voltage (VGS) max 20 V β€”
Operating Temperature Range -55C to +175C β€”
Package SuperSO8 (TDSON-8 FL) 5x6 mm PG-TDSON-8-7 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Technology Trench (OptiMOS 5, thin-wafer) N-Channel MOSFET (OptiMOS 25V)
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID, Ta) β€” 33 A
Continuous Drain Current (ID, Tc) β€” [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) β€” 100 A
On-State Resistance RDS(on) β€” 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 74 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
Lead-Free β€” Yes

Datasheets & Resources

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