BSC014N04LSATMA1 vs BSC019N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveInfineon
BSC019N04NSGATMA1
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
BSC019N04NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.58 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| RDS(on) max at VGS=10 V | 1.4 mOhm | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 96 W | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Operating Temperature Range | -55C to +175C | -55C to +150C |
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-1 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS (trench) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | β |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | β | 2.5 mΞ© |
| RDS(on) typ at VGS=10V | β | 1.9 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Power Dissipation (PD) at TC=25C | β | 125 W |