BSC014NE2LSIATMA1 vs BSC005N03LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSC005N03LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β Active
Specification Comparison
| Parameter | BSC014NE2LSIATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.32 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Ta) | 33 A | β |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | β |
| Pulsed Drain Current (IDM, Tc) | 100 A | β |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 74 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-7 (SuperSO8) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 42 A |
| Continuous Drain Current (ID) at Tc | β | 433 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | β | 0.55 mΞ© at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | β | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 188 W |
| Polarity | β | N-Channel |