BSC014NE2LSIATMA1 vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveInfineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC014NE2LSIATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.92 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Ta) | 33 A | β |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | β |
| Pulsed Drain Current (IDM, Tc) | 100 A | β |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 74 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TDSON-8-7 (SuperSO8) | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series / Family | β | OptiMOS 25V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 96 W |
| Configuration | β | Single N-Channel |
| Operating Temperature Range | β | -55C to +150C (TJ) |
| Pin Count | β | 8 |
| Gate Drive | β | Logic-level compatible |
| Rds(on) at 10V | β | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | β | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |