BSC014NE2LSIATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active
Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC014NE2LSIATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.74
Technology N-Channel MOSFET (OptiMOS 25V) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) 25 V 40 V
Gate-Source Voltage (VGS) Β±20 V β€”
Continuous Drain Current (ID, Ta) 33 A β€”
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] β€”
Pulsed Drain Current (IDM, Tc) 100 A β€”
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 74 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package PG-TDSON-8-7 (SuperSO8) SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 32 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 96 W
Gate-Source Voltage (VGS) max β€” 20 V
Operating Temperature Range β€” -55C to +175C

Datasheets & Resources

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