BSC014NE2LSIATMA1 vs BSC016N06NSTATMA1 Comparison

Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSC016N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active
Infineon
BSC016N06NSTATMA1

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 βœ“ Active

Specification Comparison

Parameter BSC014NE2LSIATMA1 BSC016N06NSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.92
Technology N-Channel MOSFET (OptiMOS 25V) OptiMOS 5
Drain-Source Voltage (VDS) 25 V β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Continuous Drain Current (ID, Ta) 33 A β€”
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] β€”
Pulsed Drain Current (IDM, Tc) 100 A β€”
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] β€”
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 74 W 167 W
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package PG-TDSON-8-7 (SuperSO8) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer β€” Infineon Technologies
Part Number β€” BSC016N06NSTATMA1
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 60 V
Gate-to-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID, Tc=25C) β€” 100 A
Continuous Drain Current (ID, Ta=25C) β€” 31 A
On-Resistance RDS(on) max (VGS=10V) β€” 1.6 mOhm
Operating Temperature Range β€” -55 C to +150 C
Series β€” OptiMOS

Datasheets & Resources

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