BSC014NE2LSIATMA1 vs BSZ0994NSATMA1 Comparison

Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSZ0994NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active
Infineon
BSZ0994NSATMA1

BSZ0994NSATMA1 - 30V 13A N-Channel OptiMOS 5 MOSFET | Infineon

BSZ0994NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC014NE2LSIATMA1 BSZ0994NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.31
Technology N-Channel MOSFET (OptiMOS 25V) Trench (OptiMOS 5)
Drain-Source Voltage (VDS) 25 V 30 V
Gate-Source Voltage (VGS) Β±20 V β€”
Continuous Drain Current (ID, Ta) 33 A 13 A
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] β€”
Pulsed Drain Current (IDM, Tc) 100 A β€”
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 74 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package PG-TDSON-8-7 (SuperSO8) PG-TSDSON-8-25 (5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5 30V
Transistor Type β€” N-Channel MOSFET
Power Dissipation (PD, Ta) β€” 2.1 W
Number of Pins β€” 8
Operating Temperature Range β€” -55C to +150C (junction)
Gate Threshold Voltage (VGS(th), typ) β€” [DATA_NEEDED: VGS(th) typ]
On-Resistance (RDS(on), typ @10V) β€” [DATA_NEEDED: RDS(on) typ @VGS=10V]
Gate Charge (Qg, typ) β€” [DATA_NEEDED: total gate charge Qg]
Packaging β€” Tape & Reel

Datasheets & Resources

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