BSC016N06NSATMA1 vs BSC093N15NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and BSC093N15NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC016N06NSATMA1 BSC093N15NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $1.83
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V
Channel Type N-Channel
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, Tc) 100 A
Continuous Drain Current (ID, TA) 30 A
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ
Total Gate Charge (Qg) 71 nC [DATA_NEEDED: total gate charge Qg]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Power Dissipation (TA) 2.5 W
Power Dissipation (TC) 139 W
Operating Temperature Range -55 °C to +150 °C [DATA_NEEDED: operating temperature range]
Package PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-7)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Gate Drive (recommended) 10 V
Technology OptiMOS™ 5 OptiMOS 5 150V
FET Type N-Channel
Drain-Source Voltage (VDS) Max 150 V
Continuous Drain Current (ID) at TC 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ
Power Dissipation (PD) at TC 139 W
Gate Drive Voltage (VGS) Recommended 10 V
Halogen Free [DATA_NEEDED: halogen free status]

Datasheets & Resources

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