BSC016N06NSATMA1 vs IPD60R280P7SAUMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and IPD60R280P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ Active

Specification Comparison

Parameter BSC016N06NSATMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.48
Manufacturer Infineon Technologies
Product Series OptiMOS™ 5 60V
Channel Type N-Channel
Drain-Source Voltage (VDS) 60 V 600 V
Continuous Drain Current (ID, Tc) 100 A 12 A
Continuous Drain Current (ID, TA) 30 A
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ
Total Gate Charge (Qg) 71 nC
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 4 V max @ ID = 190 µA
Power Dissipation (TA) 2.5 W
Power Dissipation (TC) 139 W
Operating Temperature Range -55 °C to +150 °C
Package PG-TDSON-8 FL (SuperSO8 5x6) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1
RoHS Status Compliant Compliant
Gate Drive (recommended) 10 V
Technology OptiMOS™ 5 CoolMOS P7 Superjunction (SJ) N-channel
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical)
Gate-Source Voltage (VGS) Max ±20 V
Total Power Dissipation (Ptot, Tc) 53 W
Operating Junction Temperature (TJ) -40 °C to +150 °C
Series CoolMOS P7 (7th generation, 600 V)
Integrated ESD Protection Yes

Datasheets & Resources

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