BSC016N06NSTATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC016N06NSTATMA1
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
BSC016N06NSTATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC016N06NSTATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC016N06NSTATMA1 | β |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 | OptiMOS 3 (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | 40 V |
| Gate-to-Source Voltage (VGS) | Β±20 V | Β±20 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 31 A | β |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | β |
| Power Dissipation (Tc) | 167 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Series | OptiMOS | β |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |