BSC018N04LSGATMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC018N04LSGATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC018N04LSGATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (OptiMOS 25V) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 30 A | β |
| Power Dissipation (PD) @ TC=25Β°C | 125 W | β |
| Power Dissipation (PD) @ TA=25Β°C | 2.5 W | β |
| RDS(on) Max @ VGS=10 V | 1.8 mΞ© | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | β |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | β |
| Drain-Source Voltage (VDS) | β | 25 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 74 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |