BSC018N04LSGATMA1 vs BSC035N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC018N04LSGATMA1 by Infineon and BSC035N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Active
Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 ✓ Active

Specification Comparison

Parameter BSC018N04LSGATMA1 BSC035N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 OptiMOS 3
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 40 V
Continuous Drain Current (ID) @ TC=25°C 100 A
Continuous Drain Current (ID) @ TA=25°C 30 A
Power Dissipation (PD) @ TC=25°C 125 W
Power Dissipation (PD) @ TA=25°C 2.5 W
RDS(on) Max @ VGS=10 V 1.8 mΩ
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical]
Operating Temperature Range -55°C to +150°C (TJ)
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (8-pin, exposed drain pad)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Pb-free plating) Compliant
Avalanche Tested 100% (per datasheet)
JEDEC Qualification Yes (qualified per JEDEC for target applications)
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID) at Tc=25°C 100 A
Continuous Drain Current (ID) at Ta=25°C 21 A
RDS(on) Max at VGS=10V 3.5 mΩ
Gate Threshold Voltage (VGS(th)) 1.7 V (typ)
Power Dissipation (Pd) at Ta=25°C 2.5 W
Power Dissipation (Pd) at Tc=25°C 69 W
Operating Junction Temperature -55°C to +150°C
Lead-Free Yes

Datasheets & Resources

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