BSC018N04LSGATMA1 vs BSC0502NSIATMA1 Comparison
Detailed side-by-side comparison of BSC018N04LSGATMA1 by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC018N04LSGATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.85 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (Trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 30 A | β |
| Power Dissipation (PD) @ TC=25Β°C | 125 W | β |
| Power Dissipation (PD) @ TA=25Β°C | 2.5 W | β |
| RDS(on) Max @ VGS=10 V | 1.8 mΞ© | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | β |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | β |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Continuous Drain Current (ID) at TA | β | 26 A |
| RDS(on) Max at VGS=10V | β | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | β | 9.0 nC |
| Output Charge QOSS Typ | β | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | β | 2.5 W |
| Power Dissipation at TC (Tc=25C) | β | 43 W |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |