BSC018N04LSGATMA1 vs BSZ017NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC018N04LSGATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSC018N04LSGATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.64 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 30 A | β |
| Power Dissipation (PD) @ TC=25Β°C | 125 W | β |
| Power Dissipation (PD) @ TA=25Β°C | 2.5 W | β |
| RDS(on) Max @ VGS=10 V | 1.8 mΞ© | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | β |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (TA) | β | 27 A |
| Continuous Drain Current (TC) | β | 40 A |
| On-Resistance RDS(on) @ VGS=10V | β | 1.7 mΞ© |
| On-Resistance Test Current | β | 20 A |
| Gate-Source Voltage (VGS) Rating | β | Β±16 V |
| Gate Threshold Voltage VGS(th) | β | 2 V @ 250 Β΅A |
| Total Gate Charge Qg | β | 30 nC @ VGS=10V |
| Input Capacitance Ciss | β | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | β | 2.1 W |
| Power Dissipation (TC) | β | 50 W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Series / Family | β | OptiMOS 5 25V |