BSC019N04LSTATMA1 vs BSC026N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSC026N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveInfineon
BSC026N04LSATMA1
BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΞ© MOSFET | Infineon
BSC026N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04LSTATMA1 | BSC026N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.78 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | Trench-gate OptiMOSβ’ 5 |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | β |
| Continuous Drain Current (ID, Ta=25C) | 28 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | [DATA_NEEDED: max RDS(on)] |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | β |
| Total Gate Charge Qg typ | 85 nC | β |
| Power Dissipation PD (Tc=25C) | 94 W | β |
| Operating Temperature Range | -55 C to +150 C | -55Β°C to +150Β°C |
| Package | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-6 (TDSON 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOSβ’ 5 N-Channel Power MOSFET |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 23 A |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 100 A |
| Pulsed Drain Current (IDM, Tc=25Β°C) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 2.6 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 63 W |
| Channel Type | β | N-Channel |