BSC019N04NSGATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC019N04NSGATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC019N04NSGATMA1

BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 βœ“ Active
Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC019N04NSGATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.74
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS (trench) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C 100 A β€”
Continuous Drain Current (ID) at TA=25C 30 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
RDS(on) max at VGS=10V 2.5 mΞ© β€”
RDS(on) typ at VGS=10V 1.9 mΞ© β€”
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (PD) at TA=25C 2.5 W β€”
Power Dissipation (PD) at TC=25C 125 W β€”
Operating Temperature Range -55C to +150C -55C to +175C
Package PG-TDSON-8-1 (TDSON-8 FL) SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Continuous Drain Current (ID) at Ta β€” 32 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 96 W
Gate-Source Voltage (VGS) max β€” 20 V
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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