BSC019N04NSGATMA1 vs BSC050NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSC019N04NSGATMA1 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04NSGATMA1
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
BSC019N04NSGATMA1 β ActiveInfineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04NSGATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.36 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS (trench) | OptiMOS 25V (trench) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 30 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max at VGS=10V | 2.5 mΞ© | β |
| RDS(on) typ at VGS=10V | 1.9 mΞ© | β |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 125 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-TDSON-8-1 (TDSON-8 FL) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | β | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | β | 39 A |
| R_DS(on) max at V_GS=10V | β | 5 mOhm |
| R_DS(on) typical at V_GS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 28 W |